FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes

FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes OSI Optoelectronics
  • SW11027
900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85... more
Product information "FCI-InGaAs-300B1XX Back-illuminated InGaAs Photodiodes"

900 to 1700 nm; Active Area 0.07 mm2; AA Dia. 0.3 mm, Pitch 0.5 mm; Responsivity 0.80 to 0.85 A/W; Capacitance 8 to 10 pF; Package Flip Chip Mountable

OSI Optoelectronics’ FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They are available as single element diodes or 4 - or 8- element arrays with an active area of 300 µm each.

These back-illuminated InGaAs photodiodes/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiodes/arrays come with or without ceramic substrates.

Key Features:

  • Back Illumination
  • High Responsivity on Both Front and Back
  • Low Noise
  • Spectral Range 900 to 1700 nm

Applications: High Speed Optical Communications; Multichannel Fiber Optic Receiver; Power Monitoring; Single Mode (SM) Multi Mode (MM) Fiber Optic Receiver; Fast Ethernet, SONET/SDH OC-3/STM-1 ATM; Instrumentation and Analog Receivers

Product Group: Back-illuminated InGaAs Photodiodes
Manufacturer Series Name: FCI-InGaAs-300B1XX
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