InGaAs Room Temperature PIN Photodiodes

InGaAs Room Temperature PIN Photodiodes NEP
 
  • SW11889
Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.05-5 mm; Responsivity 0.80-1.3 A/W; Dark... more
Product information "InGaAs Room Temperature PIN Photodiodes"

Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.05-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.05-100,000 nA; Bandwidth 0.7-40 MHz

New England Photoconductor’s range of room temperature indium gallium arsenide (InGaAs) PIN photodiode series comprises of standard versions (I series), suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes (IE6 series) that can be used for wavelengths up to 2600 nm.

Available in several different packaging options like bare chip, ceramic carrier, TO-5, TO-8 or TO-46 (also lensed), these detectors feature active areas with diameters ranging from 50 µm all the way to 5 mm. Custom filters, windows and packages are available on request.

Part Number I-.10 I-.30 I-.50 I-1 I-2 I-3 I-5
Active Area Diameter 100 µm 300 µm 500 µm 1.0 mm 2.0 mm 3.0 mm 5.0 mm
Responsivity @1300nm Min./Typ. 0.80/0.90 A/W
Responsivity @1550nm Min./Typ. 0.90/0.95 A/W
Dark Current Max./Typ.(Min.) 1.0/.05 nA @5 V 5.0/1.0 nA @5 V 25/5 nA @5 V 100/25 nA @5 V 200/50 nA @1 V 500/200 nA @1 V 5000 nA @0.3 V
Capacitance Max./Typ.(Min.) 1.2/1.0 pF @5 V 8.0/4.0 pF @5 V 40 pF @0 V 120/80 pF @0 V 500/300 pF@0 V

1000/600 pF@0 V

1500/1000 pF@0 V
Min. Bandwidth (50 Ω, -3dB) 2.0 MHz @5 V 0.7 MHz @5 V 0.20 MHz @5 V 40 MHz @5 V 5.3 MHz @0 V 4.0 MHz @0 V 1 MHz @0 V
Rise/Fall Time (RL= 50 Ω) 0.1 ns @5 V 0.25 ns @5 V 0.50 ns @5 V 5.0 ns @5 V 50 ns @0V 100 ns @0V 300 ns @0V
Resistance (Min./Typ.) - - - 10/50 M 6/30 M 2.0/8 MΩ 25/50 kΩ
Typ. NEP @1550 nm 1.5 x 10-15 W/√Hz 5 x 10-15 W/√Hz 8 x 10-15 W/√Hz 0.01 W/√Hz 0.03  W/√Hz 0.05  W/√Hz 0.28  W/√Hz
Linear Range (±0.2 dB) - - - 10 dBm 8 dBm
Operating Temperature -40 to +85°C
Reverse Voltage 25 V 20 V 3 V 2 V
Reverse Current 10 mA
Forward Current 10 mA
Power Dissipation - - - 100 mW 50 mW
Package Options Chip, Ceramic Carrier, TO-46 Hermetic, TO-46 Hermetic Lens Chip, Ceramic Carrier, TO-5 Chip, Ceramic Carrier, TO-8

 

 

Part Number IE6-.5 IE6-1 IE6-2
Active Area Diameter 500 µm 1.0 mm 2.0 mm
Responsivity @2300 nm Min./Typ. 0.9/1.3 A/W
Dark Current Typ./Max. 5/50 µA @0.5 V 15/75 µA @0.5 V 75/100 µA @0.5 V
Capacitance 60 pF @0 V 200 pF @0 V 800 pF @0 V
Shunt Resistance @10 mV 15 kΩ 3 kΩ 1 kΩ
D* 5 x 1010 cm.√Hz/W
NEP 1 x 10-12 W/√Hz 2 x 10-12 W/√Hz 5 x 10-12 W/√Hz
Spectral Range 1.2-2.6 µm
Cut-Off Frequency (@0 V, -3dB) 50 MHz 15 MHz 5 MHz
Test Temperature +25°C
Storage Temperature -40 to +125°C
Package Options TO-46, TO-5

 

Key Features:

  • Active Area Diameter: 50 µm to 5.0 mm
  • Responsivity @1300 nm (I Series): 0.80 A/W (Min.), 0.90 A/W (Typ.)
  • Responsivity @1550 nm (I Series): 0.90 A/W (Min.), 0.95 A/W (Typ.)
  • Responsivity @2300 nm (IE6 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.)
  • Max. Dark Current: 0.07 nA to 5 mA (@5 V, 1 V, 0.3 V)
  • Typ. Dark Current: 0.03 nA to 200 nA (@5 V, 1 V)
  • Min. Bandwidth (@5V, 50 Ω, -3dB): 0.20 GHz to 40 GHz
  • Capacitance: 0.4 pF to 2000 pF
Product Group: InGaAs Room Temperature PIN Photodiodes
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