Wavelength Range 1.2-2.6 µm; Active Area Diameter 0.05-5 mm; Responsivity 0.80-1.3 A/W; Dark Current 0.05-100,000 nA; Bandwidth 0.7-40 MHz
New England Photoconductor’s range of room temperature indium gallium arsenide (InGaAs) PIN photodiode series comprises of standard versions (I series), suitable for typical wavelengths of 1300 nm or 1550 mm, as well as extended InGaAs PIN photodiodes (IE6 series) that can be used for wavelengths up to 2600 nm.
Available in several different packaging options like bare chip, ceramic carrier, TO-5, TO-8 or TO-46 (also lensed), these detectors feature active areas with diameters ranging from 50 µm all the way to 5 mm. Custom filters, windows and packages are available on request.
Part Number | I-.10 | I-.30 | I-.50 | I-1 | I-2 | I-3 | I-5 |
Active Area Diameter | 100 µm | 300 µm | 500 µm | 1.0 mm | 2.0 mm | 3.0 mm | 5.0 mm |
Responsivity @1300nm Min./Typ. | 0.80/0.90 A/W | ||||||
Responsivity @1550nm Min./Typ. | 0.90/0.95 A/W | ||||||
Dark Current Max./Typ.(Min.) | 1.0/.05 nA @5 V | 5.0/1.0 nA @5 V | 25/5 nA @5 V | 100/25 nA @5 V | 200/50 nA @1 V | 500/200 nA @1 V | 5000 nA @0.3 V |
Capacitance Max./Typ.(Min.) | 1.2/1.0 pF @5 V | 8.0/4.0 pF @5 V | 40 pF @0 V | 120/80 pF @0 V | 500/300 pF@0 V |
1000/600 pF@0 V |
1500/1000 pF@0 V |
Min. Bandwidth (50 Ω, -3dB) | 2.0 MHz @5 V | 0.7 MHz @5 V | 0.20 MHz @5 V | 40 MHz @5 V | 5.3 MHz @0 V | 4.0 MHz @0 V | 1 MHz @0 V |
Rise/Fall Time (RL= 50 Ω) | 0.1 ns @5 V | 0.25 ns @5 V | 0.50 ns @5 V | 5.0 ns @5 V | 50 ns @0V | 100 ns @0V | 300 ns @0V |
Resistance (Min./Typ.) | - | - | - | 10/50 MΩ | 6/30 MΩ | 2.0/8 MΩ | 25/50 kΩ |
Typ. NEP @1550 nm | 1.5 x 10-15 W/√Hz | 5 x 10-15 W/√Hz | 8 x 10-15 W/√Hz | 0.01 W/√Hz | 0.03 W/√Hz | 0.05 W/√Hz | 0.28 W/√Hz |
Linear Range (±0.2 dB) | - | - | - | 10 dBm | 8 dBm | ||
Operating Temperature | -40 to +85°C | ||||||
Reverse Voltage | 25 V | 20 V | 3 V | 2 V | |||
Reverse Current | 10 mA | ||||||
Forward Current | 10 mA | ||||||
Power Dissipation | - | - | - | 100 mW | 50 mW | ||
Package Options | Chip, Ceramic Carrier, TO-46 Hermetic, TO-46 Hermetic Lens | Chip, Ceramic Carrier, TO-5 | Chip, Ceramic Carrier, TO-8 |
Part Number | IE6-.5 | IE6-1 | IE6-2 |
Active Area Diameter | 500 µm | 1.0 mm | 2.0 mm |
Responsivity @2300 nm Min./Typ. | 0.9/1.3 A/W | ||
Dark Current Typ./Max. | 5/50 µA @0.5 V | 15/75 µA @0.5 V | 75/100 µA @0.5 V |
Capacitance | 60 pF @0 V | 200 pF @0 V | 800 pF @0 V |
Shunt Resistance @10 mV | 15 kΩ | 3 kΩ | 1 kΩ |
D* | 5 x 1010 cm.√Hz/W | ||
NEP | 1 x 10-12 W/√Hz | 2 x 10-12 W/√Hz | 5 x 10-12 W/√Hz |
Spectral Range | 1.2-2.6 µm | ||
Cut-Off Frequency (@0 V, -3dB) | 50 MHz | 15 MHz | 5 MHz |
Test Temperature | +25°C | ||
Storage Temperature | -40 to +125°C | ||
Package Options | TO-46, TO-5 |
Key Features:
- Active Area Diameter: 50 µm to 5.0 mm
- Responsivity @1300 nm (I Series): 0.80 A/W (Min.), 0.90 A/W (Typ.)
- Responsivity @1550 nm (I Series): 0.90 A/W (Min.), 0.95 A/W (Typ.)
- Responsivity @2300 nm (IE6 Series): 0.9 A/W (Min.), 1.3 A/W (Typ.)
- Max. Dark Current: 0.07 nA to 5 mA (@5 V, 1 V, 0.3 V)
- Typ. Dark Current: 0.03 nA to 200 nA (@5 V, 1 V)
- Min. Bandwidth (@5V, 50 Ω, -3dB): 0.20 GHz to 40 GHz
- Capacitance: 0.4 pF to 2000 pF
Product Group: | InGaAs Room Temperature PIN Photodiodes |