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APD Silicon Avalanche Photodiodes

APD Silicon Avalanche Photodiodes OSI Optoelectronics

AMS item number: SW11018

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800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to... more

Product information "APD Silicon Avalanche Photodiodes"

800 nm Band Optimized; Active Area 0.03 to 19.6 mm2; AA Dia. 0.2 to 5.0 mm; Responsivity 20 to 50 A/W; Capacitance 1.5 to 105 pF; Package TO-5, TO-8, TO-52

OSI Optoelectronics’ APD series of silicon avalanche photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is this optimized series of high responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.

Optimized for the 800 nm wavelength band, the APD series is available with five different active area sizes ranging from 0.2 to 5.0 mm in diameter. Depending on active area size, the devices are supplied in TO-5, TO-8 or TO-52 packages.

Key Features:

High Speed Responsivity / QE
High Bandwidth / Fast Response
Low Noise
Low Bias Voltage
Hermetically Sealed TO-Packages

Applications: High Speed Optical Communications; Laser Range Finders; Bar Code Readers; Optical Remote Control; Medical Equipment; High Speed Photometry

Product Group:	Silicon Avalanche Photodiodes
Manufacturer Series Name:	APD

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