Active Area Diameter 0.1-5 mm; Responsivity 0.95 A/W; Capacitance 0.6-950 pF; System Bandwidth 3-3,500 MHz; Dark Current <1-25 nA; Package TO-5, TO-8, TO-18, SMT, Ceramic Carrier
Excelitas’ InGaAs PIN photodiodes and detectors provide high quantum efficiency from 800 nm to 1700 nm with the peak wavelength at 1550 nm. They feature low capacitance for extended bandwidth, high shunt resistance for high sensitivity, high linearity, and uniformity within two percent across the detector active area.
High-speed versions include various models of the C30617 and C30618 series with 100 µm or 350 µm active area diameter chip in TO-18 package (flat glass window or ball lens, partly with FC receptacle) or on a rectangular ceramic carrier. These high-speed InGaAs PIN photodiodes feature low capacitance for extended bandwidth as well as high resistance for high sensitivity.
Large-area versions include C30619GH, various models of the C30641 series, C30642GH, C30665GH and C30723GH, with 0.5 mm to 5.0 mm active area diameter chip in TO-5, TO-8 or TO-18 package with flat glass window or flange, some models with single ode dual thermo electric (TE) cooler included in the package. These large-area InGaAs PIN photodiodes feature high responsivity, low dark current and low capacitance for fast response time.
Applications: Beam Rider Receiver; Range Finding; Training & Simulation; Height of Burst; Laser Proximity Sensor; LiDAR; Telecom; Instrumentation; Photometry; Laser Power Monitoring; Fiber Optic Test Equipment; High-speed Switching; Spot Tracking; Missile Guidance; Laser Warning System
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