AMS Technologies offers a broad variety of NIR (near infrared) and MWIR (midwave infrared) detectors and arrays that are based on lead sulfide (PbS) or lead selenide (PbSe). These detectors cover a wide spectral range with wavelengths from 1 µm to 5 µm, which is highly relevant for applications in inline or mobile process analytics, quality control and gas sensing.
The PbS near-infrared (NIR) detectors are available as single-pixel, multi-single-pixel and multi-pixel versions. Packaging options include bare chips (protected by thin-film encapsulation and enabling small, flexible and very efficient devices), bare chips wire-bonded on PCB, or TO packages with double encapsulation, with an optional integrated single- or two-stage TEC (thermoelectric cooler) for increased detectivity and sensitivity at larger wavelengths.
The series of PbS line array detectors encompasses bare chips or encapsulated modules, with up to 512 pixels and a pitch starting from 50 µm. PbS bare chip line array detectors can be directly wire-bonded to printed circuit boards, while PbS module line array NIR detectors combine PbS detector array, TEC temperature stabilization and corresponding read-out electronics in a hermetic package.
A series of single-pixel PbSe detectors is available uncooled as well as with integrated TEC, with different geometries and packaging solutions (SMD or TO package) – and optional accessories like corresponding preamplifier boards.
AMS Technologies’ portfolio also includes a series of bare chip and TO package PbSe NIR detectors, available as single-pixel, multi-single-pixel (bare chips on small, pre-bonded, solderable adapter PCBs) and multi-pixel versions (multiple pixels in line or matrix design, realized directly on the substrate). The bare chips are protected by a unique thin-film encapsulation for longer lifetime and highest detectivity at room temperature, while TO-packaged single-pixel versions feature an optional integrated single- or two-stage TEC for increased detectivity and sensitivity at larger wavelengths.
Three different evaluation kits (single pixel, multi pixel and line array) for the PbS and PbSe detectors are available, enabling users to easily compare different varieties of the detectors and to quickly develop circuit designs for their applications.
Complementing our PbS and PbSe detectors and arrays, we also offer a broad range of additional discrete detectors and arrays based on other materials like silicon (for visible to near-IR wavelengths) or InGaAs (for typical NIR wavelengths used in optical communications). Other discrete detectors and arrays available from AMS Technologies include devices based on materials like HgCdTe, InAs/InAsSb or GaAs, but also balanced photodetectors, integrated optical receiver modules or infrared detection modules.
Guiding and focusing light onto optical detectors can be done using AMS Technologies’ broad portfolio of optics components like optical lenses, optical filters or optical windows, as well as our optical fibers.
Lead sulfide (PbS) and lead selenide (PbSe) detectors are thin film semiconductor devices that are used as infrared (IR) detectors with a wide useful spectral coverage. PbS and PbSe photodetectors are available in a wide variety of sizes, designs and packages, from hermetically sealed TO packages to bare chips to module line arrays.
PbS detectors are sensitive to light with wavelengths between 1 and 3 µm and thus very well suited for near infrared (NIR) applications like detecting O-H and C-H bonds (showing absorption mainly in the NIR range) and thus allowing the detection and classification of e.g. fatty acids, alcohols, polymers or textiles.
With 1 to 5 µm, a PbSe detector’s sensitivity extends into the mid infrared (MIR) domain, allowing to detect gases like CO2 (monitoring ambient air quality or analyzing breath gas), H2O, CH4, NO or N2O. Both PbS and PbSe detectors can also be used as flame and spark sensors for detecting and preventing fire or characterizing flames.
While detectors based on other materials like silicon or InGaAs are operated as photodiodes, PbS and PbSe detectors utilize the photoconductive effect where infrared radiation hitting the detector lowers the resistance of the sensor’s active area.
Compared to other IR detectors, PbS- and PbSe-based devices show a high detectivity at room temperature. With their relatively low cost per active area, PbS and PbSe are an alternative to IR photodiodes such as InGAas that show less spectral width and often require thermoelectric cooling to reach comparable performance.
Alternative Terms: Lead Sulfide Detector; Lead Selenide Detector; PbS Optical Detector; PbSe Optical Detector; PbS Optical Array; PbSe Optical Array; PbS Detector Module; PbSe Detector Module