Product information "PC/PCI HgCdTe (MCT) Photoconductive Detectors"
1-15 µm; Active Area 0.000625-16 mm²; Detectivity ≥9.0×106- 4.0×1010 cm·Hz1/2/W; Resistance ≤120-≤1,200 Ω; Package TO39, BNC, TO8, TO 66
Vigo System’s PC/PCI range of photoconductive detectors is based on the photoconductive effect. Infrared radiation generates charge carriers in the semiconductor active region decreasing its resistance. The resistance change is sensed as a current change by applying a constant voltage bias.
The PC/PCI series devices are characterized by near linear current-voltage characteristics. The electric field in photoconductors is constant across the device. These components are based on sophisticated HgCdTe heterostructures for the best performance and stability and optimized for the maximum performance at λopt.
Vigo System’s PC series features 1 µm to 12 μm HgCdTe uncooled, ambient temperature IR photoconductive detectors. The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength.
PC series devices are also available thermoelectrically cooled by two-stage (PC-2TE series), three-stage (PC-3TE series) or even four-stage (PC-4TE series) TEC structures, resulting in 1 µm to 14 μm (PC-2TE), 1 µm to 15 μm (PC-3TE) or 1 µm to 16 µm (PC-3TE) HgCdTe photoconductive detectors. These series are protected by a 3° wedged sapphire (wAl2O3, PC-2TE) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.
The PCI series is optically immersed in order to further improve the parameters of the devices. This series’ cut-on wavelength is limited by GaAs transmittance (~0.9 μm).
Corresponding to the PC series, PCI series components are also available either as 1 µm to 12 μm HgCdTe uncooled, ambient temperature IR photoconductive detectors or as 1 µm to 15 µm (PCI-4TE: 16 µm) HgCdTe photoconductive detectors that are thermoelectrically cooled by two-stage (PCI-2TE series), three-stage (PCI-3TE series) or even four-stage (PCI-4TE series) TEC structures, again with a 3° wedged sapphire (wAl2O3, PC-2TE) or wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects.
For its range of PC/PCI HgCdTe (MCT) photoconductive detectors, Vigo System provides a broad range of selected line or configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package.
High Stability and Reliability, Long Lifetime and MTBF
1/f Noise Corner Frequency fc: ≤10 kHz to ≤20 kHz
Active Element Material: Epitaxial HgCdTe Heterostructure
Optimal Wavelength λopt: 5.0 to 14.0 μm
With or Without Immersion Microlens Technology
Uncooled, Room Temperature Operation or Thermoelectrically Cooled (2-Stage, 3-Stage or 4-Stage)
Detectivity D*: ≥1.9x107 to ≥4.0×1010 cm·Hz1/2/W (λpeak, 20 kHz), ≥9.0×106 to ≥2.0×1010 cm·Hz1/2/W (λopt, 20 kHz)
Different Sizes of Active/Optical Area A(O): 25×25 µm² to 4×4 mm²
Current Responsivity-Active (Optical) Area Length Product Ri(λopt)·L(O): ≥0.001 to ≥3.0 A·mm/W
Time Constant τ: ≤2 ns to ≤20,000 ns
Bias Voltage Active Area Length Ration Vb/L: ≤0.15 V/mm to ≤24.5 V/mm
Resistance R: ≤120 to ≤1,200 Ω
Active Element Temperature Tdet: ~195 to ~230 K (TE-cooled Versions)
Different Acceptance Angles Φ: ~36° to ~124°
Different Packages: TO39, BNC, TO8, TO 66
Different Infrared Windows: None, wAl2O3, wZnSeAR
Wide Range of Dedicated Preamplifiers and Accessories Available
Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense
HgCdTe (MCT) Photoconductive Detectors
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