Product information "Large-area UV-enhanced Silicon Avalanche Photodiodes APD"
Active Area 5x5-10x10 mm; Responsivity 16-52 A/W; Capacitance 30-100 pF; Package Square Flat Pack; Response Time 2, 5 ns
Excelitas’ series of large-area, UV-enhanced silicon avalanche photodiodes (Si APDs) are intended for use in a wide variety of broadband low-light-level applications covering the spectral range from below 400 to over 700 nm.
These low-noise, low-capacitance and high-gain Si APDs are packaged in a square flat pack with or without windows or on ceramics. The no-window devices can detect direct radiation of X-rays and electrons at the energies listed, and the windowed packages are best for easy scintillator coupling.
The C30739ECERH and C30739ECERH-2 short-wavelength, enhanced silicon avalanche photodiode (Si APD) cover the spectral range from less than 400 nm to greater than 700 nm. With low noise, high gain, low capacitance and an enhanced UV-response with a quantum efficiency above 70% at 430 nm, these Si APDs are designed for low-light-level applications such as molecular imaging. Their ceramic carrier package allows for easy handling and coupling to scintillation crystals such as LSO and BGO.
The C30703FH and C30703FH-200 series of silicon avalanche photodiodes (Si APD) with dimensions of 10 x 10 mm are designed for extremely large areas and offered in a flat-pack package suitable for radiation detection. This series is enhanced for blue-wavelength response and has a peak quantum efficiency at ~ 530 nm.
The large area C30626FH series silicon avalanche photodiodes (Si APD) with dimensions of 4.7 x 4.7 mm use a standard reach-through structure, have peak detection at about 900 nm, and are offered in a flat-pack package for either direct detection or easy coupling to scintillator crystals.