High-performance InGaAs Avalanche Photodiodes APD

AMS item number: SW11550

Active Area Diameter 50-200 µm; Responsivity 9.3 A/W; Capacitance 0.6-2.5 pF; NEP 15-100... more

Product information "High-performance InGaAs Avalanche Photodiodes APD"

Active Area Diameter 50-200 µm; Responsivity 9.3 A/W; Capacitance 0.6-2.5 pF; NEP 15-100 fW/√Hz; Dark Current 25-70 nA; Package TO-18, Ceramic Carrier; System Bandwidth 800-2,000 MHz

Excelitas’ high-performance InGaAs avalanche photodiode (APD) series C30644, C30645 and C30662 are high-speed, large-area InGaAs/lnP avalanche photodiodes. These devices provide high quantum efficiency, high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1550 nm, ideally suitable for use in eye-safe laser range finding systems.

These high-performance InGaAs APDs are supplied in a hermetically sealed TO-18 package, with the chip mounted close to the window to allow easy interfacing with the optical system, or on a ceramic carrier. The C30645 and C30662 series APD are also offered in the C30659 series of APD receivers with low-noise transimpedance amplifier , as well as built-in thermo-electric cooler (the LLAM series ). Other custom packages are also available on request.

Applications: LiDAR; Laser Range Finder; Scanning Video Imager; Confocal Microscope; Free-space Communication; Spectrophotometers; Fluorescence Detection; Luminometer; DNA Sequencer; Particle Sizing

Part Number

Active Diameter

Capacitance

^{System Bandwidth}

Dark Current

Breakdown Voltage

Temperature Coefficient

Typical Gain

Responsivity 1550 nm

NEP

Package

Window

Download

min

max

Material

Aperture

C30662EH

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

9.3 A/W

100 fW/√Hz

TO-18

Glass

Large

Datasheet

C30662EH-1

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

9.3 A/W

100 fW/√Hz

TO-18

Glass

Large

Datasheet

C30662EH-3

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

9.3 A/W

100 fW/√Hz

TO-18

Glass

Small

Datasheet

C30662ECERH

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

9.3 A/W

100 fW/√Hz

Ceramic Carrier

N/A

Datasheet

C30662ECERH-1

200 µm

2.5 pF

800 MHz

70 nA

40 V

90 V

0.14 V/°C

9.3 A/W

100 fW/√Hz

Ceramic Carrier

N/A

Datasheet

C30645EH

80 µm

1.25 pF

1,000 MHz

35 nA

40 V

90 V

0.14 V/°C

9.3 A/W

25 fW/√Hz

TO-18

Silicon

Small

Datasheet

C30645ECERH

80 µm

1.25 pF

1,000 MHz

35 nA

40 V

90 V

0.14 V/°C

9.3 A/W

25 fW/√Hz

Ceramic Carrier

N/A

Datasheet

C30644EH

50 µm

0.6 pF

2,000 MHz

25 nA

40 V

90 V

0.14 V/°C

9.3 A/W

15 fW/√Hz

TO-18

C30644ECERH

50 µm

0.6 pF

2,000 MHz

25 nA

40 V

90 V

0.14 V/°C

9.3 A/W

15 fW/√Hz

Ceramic Carrier

N/A

Product Group:

High-performance InGaAs Avalanche Photodiodes APD

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High-Performance InGaAs Avalanche Photodiodes APD Excelitas Datasheet C30645 & C30662 Series InGaAs APD Excelitas Datasheet

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