Active Area Diameter 50-200 µm; Responsivity 9.3 A/W; Capacitance 0.6-2.5 pF; NEP 15-100 fW/√Hz; Dark Current 25-70 nA; Package TO-18, Ceramic Carrier; System Bandwidth 800-2,000 MHz
Excelitas’ high-performance InGaAs avalanche photodiode (APD) series C30644, C30645 and C30662 are high-speed, large-area InGaAs/lnP avalanche photodiodes. These devices provide high quantum efficiency, high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1550 nm, ideally suitable for use in eye-safe laser range finding systems.
These high-performance InGaAs APDs are supplied in a hermetically sealed TO-18 package, with the chip mounted close to the window to allow easy interfacing with the optical system, or on a ceramic carrier. The C30645 and C30662 series APD are also offered in the C30659 series of APD receivers with low-noise transimpedance amplifier , as well as built-in thermo-electric cooler (the LLAM series ). Other custom packages are also available on request.
Applications: LiDAR; Laser Range Finder; Scanning Video Imager; Confocal Microscope; Free-space Communication; Spectrophotometers; Fluorescence Detection; Luminometer; DNA Sequencer; Particle Sizing
Part Number | Active Diameter | Capacitance | System Bandwidth | Dark Current | Breakdown Voltage | Temperature Coefficient | Typical Gain | Responsivity 1550 nm | NEP | Package | Window | Download | ||
min | max | Material | Aperture | |||||||||||
C30662EH | 200 µm | 2.5 pF | 800 MHz | 70 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 100 fW/√Hz | TO-18 | Glass | Large | Datasheet |
C30662EH-1 | 200 µm | 2.5 pF | 800 MHz | 70 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 100 fW/√Hz | TO-18 | Glass | Large | Datasheet |
C30662EH-3 | 200 µm | 2.5 pF | 800 MHz | 70 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 100 fW/√Hz | TO-18 | Glass | Small | Datasheet |
C30662ECERH | 200 µm | 2.5 pF | 800 MHz | 70 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 100 fW/√Hz | Ceramic Carrier | N/A | N/A | Datasheet |
C30662ECERH-1 | 200 µm | 2.5 pF | 800 MHz | 70 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 100 fW/√Hz | Ceramic Carrier | N/A | N/A | Datasheet |
C30645EH | 80 µm | 1.25 pF | 1,000 MHz | 35 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 25 fW/√Hz | TO-18 | Silicon | Small | Datasheet |
C30645ECERH | 80 µm | 1.25 pF | 1,000 MHz | 35 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 25 fW/√Hz | Ceramic Carrier | N/A | N/A | Datasheet |
C30644EH | 50 µm | 0.6 pF | 2,000 MHz | 25 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 15 fW/√Hz | TO-18 | - | - | - |
C30644ECERH | 50 µm | 0.6 pF | 2,000 MHz | 25 nA | 40 V | 90 V | 0.14 V/°C | 10 | 9.3 A/W | 15 fW/√Hz | Ceramic Carrier | N/A | N/A | - |
Product Group: | High-performance InGaAs Avalanche Photodiodes APD |