High-performance InGaAs Avalanche Photodiodes APD

High-performance InGaAs Avalanche Photodiodes APD Excelitas
 
  • SW11550
Active Area Diameter 50-200 µm; Responsivity 9.3 A/W; Capacitance 0.6-2.5 pF; NEP 15-100... more
Product information "High-performance InGaAs Avalanche Photodiodes APD"

Active Area Diameter 50-200 µm; Responsivity 9.3 A/W; Capacitance 0.6-2.5 pF; NEP 15-100 fW/√Hz; Dark Current 25-70 nA; Package TO-18, Ceramic Carrier; System Bandwidth 800-2,000 MHz

Excelitas’ high-performance InGaAs avalanche photodiode (APD) series C30644, C30645 and C30662 are high-speed, large-area InGaAs/lnP avalanche photodiodes. These devices provide high quantum efficiency, high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1550 nm, ideally suitable for use in eye-safe laser range finding systems.

These high-performance InGaAs APDs are supplied in a hermetically sealed TO-18 package, with the chip mounted close to the window to allow easy interfacing with the optical system, or on a ceramic carrier. The C30645 and C30662 series APD are also offered in the C30659 series of APD receivers with low-noise transimpedance amplifier , as well as built-in thermo-electric cooler (the LLAM series ). Other custom packages are also available on request.

Applications: LiDAR; Laser Range Finder; Scanning Video Imager; Confocal Microscope; Free-space Communication; Spectrophotometers; Fluorescence Detection; Luminometer; DNA Sequencer; Particle Sizing

Part Number Active Diameter Capacitance System Bandwidth Dark Current Breakdown Voltage Temperature Coefficient Typical Gain Responsivity 1550 nm NEP Package Window Download
min max Material Aperture
C30662EH 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Large Datasheet
C30662EH-1 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Large Datasheet
C30662EH-3 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz TO-18 Glass Small Datasheet
C30662ECERH 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz Ceramic Carrier N/A N/A Datasheet
C30662ECERH-1 200 µm 2.5 pF 800 MHz 70 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 100 fW/√Hz Ceramic Carrier N/A N/A Datasheet
C30645EH 80 µm 1.25 pF 1,000 MHz 35 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 25 fW/√Hz TO-18 Silicon Small Datasheet
C30645ECERH 80 µm 1.25 pF 1,000 MHz 35 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 25 fW/√Hz Ceramic Carrier N/A N/A Datasheet
C30644EH 50 µm 0.6 pF 2,000 MHz 25 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 15 fW/√Hz TO-18 - - -
C30644ECERH 50 µm 0.6 pF 2,000 MHz 25 nA 40 V 90 V 0.14 V/°C 10 9.3 A/W 15 fW/√Hz Ceramic Carrier N/A N/A -

 

Product Group: High-performance InGaAs Avalanche Photodiodes APD
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