FCI-InGaAs-XXX-LCER InGaAs Photodiodes

FCI-InGaAs-XXX-LCER InGaAs Photodiodes OSI Optoelectronics
 
  • AMS item number: SW11032
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Description
900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0... more
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Product information "FCI-InGaAs-XXX-LCER InGaAs Photodiodes"

900 to 1700 nm; Active Area 0.004 to 0.196 mm2; AA Dia. 0.07 to 0.5 mm; Rise Time 0.20 to 10.0 ns; Responsivity 0.80 to 0.95 A/W; Capacitance 0.65 to 20 pF; Package Gull Wing Ceramic Substrate

OSI Optoelectronics’ FCI-InGaAs-XXX-LCER series of InGaAs photodiodes on ceramic submount with active area diameters of 70, 120, 300, 400 and 500 µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates.

The chips can be epoxy/eutectic mounted onto the ceramic substrate.

Key Features:

  • Low Noise
  • High Responsivity
  • High Speed
  • Spectral Range 900 to 1700 nm


Applications: High Speed Optical Communications; Gigabit Ethernet/Fibre Channel; SONET / SDH, ATM; Diode Laser Monitor; Instrumentation

Product Group: InGaAs Photodiodes
Manufacturer Series Name: FCI-InGaAs-XXX-LCER
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FCI-InGaAs-XXX-LCER InGaAs Photodiodes OSI Optoelectronics Datasheet
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