XUV-XXX(C) Soft X-Ray, Far-UV-enhanced Si Photodiodes

XUV-XXX(C) Soft X-Ray, Far-UV-enhanced Si Photodiodes OSI Optoelectronics
 
  • SW11072
0.070 to 1100 nm; Active Area 5 to 100 mm2; AA Dia. 2.57 to 11.33 mm Round, 6.78 x 5.59, 10.00... more
Product information "XUV-XXX(C) Soft X-Ray, Far-UV-enhanced Si Photodiodes"

0.070 to 1100 nm; Active Area 5 to 100 mm2; AA Dia. 2.57 to 11.33 mm Round, 6.78 x 5.59, 10.00 x 10.00 mm Square; Capacitance 300 to 8,000 pF; Package TO-5, TO-8, BNC, Ceramic

OSI Optoelectronics' award-winning XUV-XXX(C) soft X-ray, far-UV-enhanced silicon photodiode detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-ray region of the electromagnetic spectrum without use of any scintillator crystals or screens.

Over a wide range of sensitivity from 0.07 to 200 nm (6 to 17,600 eV), one electron-hole pair is created per 3.63 eV of incident energy which corresponds to extremely high stable quantum efficiencies predicted by Eph/3.63 eV. For measurement of radiation energies above 17.6 keV, refer to the fully depleted silicon photodiodes series of high-speed and high-energy radiation detectors.

A reverse bias can be applied to reduce the capacitance and increase speed of response. In the unbiased mode, these detectors can be used for applications requiring low noise and low drift. These detectors are also excellent choices for detecting light wavelengths between 350 and 1100 nm.

The detectors can be coupled to a charge sensitive preamplifier or low-noise op-amp as shown in the datasheet.

Key Features:

  • Direct Soft X-Ray, Far-UV Detection
  • No Bias Needed
  • High Quantum Efficiency
  • Low Noise
  • High Vacuum/Cryogenically Compatible
  • 0.070 to 1100 nm Wavelength Range


Applications: Electron Detection; Medical Instrumentation; Dosimetry; Radiation Monitoring, X-ray Spectroscopy, Charged Particle Detection

Product Group: Soft X-Ray, Far-UV-enhanced Si Photodiodes
Manufacturer Series Name: XUV-XXX(C)
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