Product information "SESx High-power Laser Diodes"
Single Emitter, Submount; 803 to 975 nm; Spectral Width 2, 4 nm; Output Power 4-9 W CW; Threshold Current 0.5-1.2 A; Slope Efficiency 1.0, 1.1 W/A
II-VI Incorporated has designed the SESx series of single-emitter high-power laser diodes on submount to provide the high output power, high coupling efficiency and high reliability required for pumping solid-state and next generation fiber lasers as well as direct laser and other high-power laser diode applications.
SESx series laser diodes are available in three versions:
The proprietary E2 front mirror passivation process, developed at II-VI Incorporated’s Zurich site, prevents catastrophic optical damage (COD) to the laser diode facet even at extremely high output powers. The single emitter laser diodes are p-side down mounted on an optimized submount providing very low thermal resistance.
3.6 x 0.4/0.5 mm Laser Diode
90/190 µm Wide Emitter
Highly Reliable Single Quantum Well MBE Structure
Optimized Submount With Very Low Thermal Resistance
CW Output Power: 4, 8, 9 W (p-side Down Mounted)
Center Wavelength: 803, 806, 808, 915, 940, 975 nm (Other Available on Request)
Spectral Width: 2, 4 nm
Wavelength Shift With Temperature: 0.3 nm/°C
Beam Divergence Parallel/Perpendicular to Junction: 6°/27°, 6°/32°, 8°/23°
Threshold Current: 0.5, 0.6, 1.2 A
Slope Efficiency: 1.0, 1.1 W/A
Operating Current: 4, 8, 9.5 A
Operating Voltage: 1.9, 2.2 V
Package Dimensions: 3.9 x 4.05 x 1.2 mm
Applications: Solid State Laser Pumping; Fiber Laser Pumping; Medical; Analytical; Printing; Material Processing