FCI-InGaAs-WCER-LR InGaAs Photodiodes

FCI-InGaAs-WCER-LR InGaAs Photodiodes OSI Optoelectronics
 
  • AMS item number: SW11029
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Description
900 to 1700 nm; Active Area 0.125 mm2; AA Dimensions 0.25 x 0.5 mm; Responsivity 0.80 to 0.95... more
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Product information "FCI-InGaAs-WCER-LR InGaAs Photodiodes"

900 to 1700 nm; Active Area 0.125 mm2; AA Dimensions 0.25 x 0.5 mm; Responsivity 0.80 to 0.95 A/W; Capacitance 15 pF; Package Ceramic Substrate; Reflectance <0.6

OSI Optoelectronics’ FCI-InGaAs-WCER-LR series of InGaAs photodiodes feature a very low reflectance.

Designed for telecommunication applications, the FCI-InGaAs-WCER-LR series of InGaAs/InP photodiodes has a typical optical reflectance of less than 0.6% from 1520 to 1620 nm.

This ultra-low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered anti-reflective (AR) coating directly onto the surface of the InGaAs/InP photodiode.

Key Features:

  • Reflectance: Less Than 0.6%
  • Low Noise
  • High Responsivity
  • High Speed
  • Spectral Range: 900 to 1700 nm


Applications: Wavelength Lockers / Wavelength Monitoring; Lasers Back Facet Monitoring; DWDM; Instrumentation

Product Group: InGaAs Photodiodes
Manufacturer Series Name: FCI-InGaAs-WCER-LR
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FCI-InGaAs-WCER-LR InGaAs Photodiodes OSI Optoelectronics Datasheet
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