PCAS/PVAS InAs/InAsSb Superlattice Detectors

PCAS_PVAS InAs_InAsSb Superlattice Detectors Vigo System
 
  • SW11682
1.6-10.5 µm; Active Area 0.01, 1 mm²; Responsivity 0.04-4.4 A/W; Detectivity 1.2x10 8 -9.0×10 9... more
Product information "PCAS/PVAS InAs/InAsSb Superlattice Detectors"

1.6-10.5 µm; Active Area 0.01, 1 mm²; Responsivity 0.04-4.4 A/W; Detectivity 1.2x108-9.0×109 cm·Hz1/2/W; Resistance 28-5,000 Ω; Package TO39, TO8

Vigo System develops and produces a variety of MWIR and LWIR type II superlattice (T2SL) photoconductive (PC, PCAS series) and photovoltaic (PV, PVAS series) IR detectors, operating at room temperature or thermoelectrically cooled. These detectors achieve excellent parameters without cryogenic cooling (LN2). They do not contain mercury or cadmium and are complying with the RoHS Directive.

The PCAS series of InAs/InAsSb type II superlattice photoconductive IR detectors contains 2-stage (PCAS-2TE series) or 3-stage (PCAS-3TE series) thermoelectrically (TE) cooled detectors with excellent parameters. Photoconductive detectors should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise.

A 3° wedged zinc selenide anti-reflection (AR) coated window (wZnSeAR) prevents unwanted interference effects. Some models additionally feature anti-reflection (AR) coating applied to the active element. For detection of CW radiation, the use of an optical chopper system is recommended.

The PVAS series of InAs/InAsSb type II superlattice photovoltaic IR detectors contains uncooled or 2-stage (PVAS-2TE series) thermoelectrically (TE) cooled detectors with excellent parameters. The PVAS-2TE series features a 3° wedged sapphire window (wAl2O3) preventing unwanted interference effects.

Key Features:

  • Active Element Material: Epitaxial InAs or InAsSb Superlattice Hetereostructure
  • Wide Spectral Range: 1.6 µm to 10.5 μm
  • High Responsivity
  • Excellent Linearity
  • Cut-on Wavelength λcut-on (10%): 1.6 to ≤2.0 μm ±0.2 (±0.5) µm
  • Peak Wavelength λpeak: 4.0 to 11.0 μm ±0.3 (±0.5) µm
  • Cut-off Wavelength λcut-off (10%): 5.8 to 15.0 μm ±0.3 µm
  • Detectivity D*: ~1.2x108 to ~9.0×109 cm·Hz1/2/W (λpeak)
  • Current Responsivity Ri(λpeak): ~0.04 to ~4.4 A/W
  • Time Constant τ: ~3 to ~17 ns
  • Resistance R: ~28 Ω to ~5,000 Ω
  • Environmentally Friendly, Complying With the RoHS Directive
  • No Bias Required (PVAS Series)
  • Bias Voltage Vb (PCAS Series): 0.5, 0.6 V Typ.
  • No 1/f Noise (PVAS Series)
  • 1/f Noise Corner Frequency fc (PCAS Series): 20 to 300 kHz Typ.
  • Uncooled, Room Temperature Operation or 2-Stage / 3-Stage Thermoelectrically (TE) Cooled Versions
  • Active Element Temperature Tdet: ~210 ,~230 K (TE-cooled Versions)
  • Size of Active Area A: 0.1×0.1 mm², 1x1 mm²
  • Acceptance Angle Φ: ~70°, ~90°
  • Package: TO39, TO8
  • Infrared Windows: None, wZnSeAR, wAl2O3

Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense

Product Group: InAs/InAsSb Superlattice Detectors
Manufacturer Series Name: PCAS/PVAS
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