Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8
Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.
The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics.
To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control.
The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package.
The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package.
The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package.
Key Features:
- Active Area Diameter: 0.8, 1.5, 3 mm
- High Quantum Efficiency at 1060 nm: ≤40%
- Enhanced Long-wave Response: >900 nm
- Fast Response Time: 2 ns
- Wide Operating Temperature Range
- Low Capacitance @100 kHz: 2 to 10 pF
- Responsivity @1060 nm: 25 to 36 A/W
- Dark Current: 50, 100 nA
- Spectral Noise Current: 0.5 pA/√Hz
- NEP @1060 nm: 14 to 20 fW/√Hz
- Vop Range: 275 to 425 V
- Hermetically Sealed Packages: TO-5, TO-8
- RoHS Compliant
- TEC Option Available
- Customization Available Upon Request
Applications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser Detection
Product Group: | 1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD |