1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD

1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD Excelitas
 
  • SW11551
Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz;... more
Product information "1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD"

Active Area Diameter 0.8-3 mm; Responsivity 25-36 A/W; Capacitance 2-10 pF; NEP 14-20 fW/√Hz; Dark Current 50, 100 nA; Package TO-5, TO-8

Excelitas’ 1064 nm long-wavelength enhanced Silicon Avalanche Photodiodes (APDs) C30954EH, C30955EH and C30956EH are made using a double-diffused “reach-through” structure. The design of these photodiodes is such that their long-wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.

The C30954EH, C30955EH and C30956EH long-wavelength enhanced APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low-noise, low-capacitance, and fast rise and fall times characteristics.

To help simplify many design needs, these APDs are also available in Excelitas’ high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. In addition, these APDs are also available with built-in thermo-electric cooler for easier temperature control.

The C30954EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 0.8 mm active area diameter in a TO-5 package.

The C30955EH long-wavelength enhanced silicon avalanche photodiode (Si APD) provides a 1.5 mm active area diameter in a TO-5 package.

The C30956EH large-area, long-wavelength enhanced silicon avalanche Photodiode (Si APD) provides a 3 mm active area diameter in a TO-8 package.

Key Features:

  • Active Area Diameter: 0.8, 1.5, 3 mm
  • High Quantum Efficiency at 1060 nm: ≤40%
  • Enhanced Long-wave Response: >900 nm
  • Fast Response Time: 2 ns
  • Wide Operating Temperature Range
  • Low Capacitance @100 kHz: 2 to 10 pF
  • Responsivity @1060 nm: 25 to 36 A/W
  • Dark Current: 50, 100 nA
  • Spectral Noise Current: 0.5 pA/√Hz
  • NEP @1060 nm: 14 to 20 fW/√Hz
  • Vop Range: 275 to 425 V
  • Hermetically Sealed Packages: TO-5, TO-8
  • RoHS Compliant
  • TEC Option Available
  • Customization Available Upon Request

Applications: Range Finding; LiDAR (Light Detection and Ranging); YAG Laser Detection

Product Group: 1064 nm Long-wavelength Enhanced Silicon Avalanche Photodiodes APD
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